FGB20N60SF Series

IGBT, 600V, 20A, 2.2V, TO-247<BR>High Speed Field Stop

Catalog

IGBT, 600V, 20A, 2.2V, TO-247<BR>High Speed Field Stop

Part	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Gate Charge	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	IGBT Type	Power - Max [Max]	Switching Energy	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic
ON Semiconductor FGB20N60SF	60 A	-55 °C	150 °C	10 Ohm 15 V 20 A 400 V	65 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	600 V	TO-263 (D2PAK)	90 ns	13 ns	Field Stop	208 W	160 µJ 370 µJ	40 A	2.8 V
ON Semiconductor FGB20N60SF	60 A	-55 °C	150 °C	10 Ohm 15 V 20 A 400 V	65 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	600 V	TO-263 (D2PAK)	90 ns	13 ns	Field Stop	208 W	160 µJ 370 µJ	40 A	2.8 V

Catalog

IGBT, 600V, 20A, 2.2V, TO-247<BR>High Speed Field Stop

Key Features

• High current capability

• Low saturation voltage: VCE(sat)=2.2V @ IC= 20A

• High input impedance

• Fast switching: EOFF=8µJ/A

• RoHS compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.