JANHCB2N5415
ActivePNP SILICON LOW-POWER -200 TO -300V, 1A
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JANHCB2N5415
ActivePNP SILICON LOW-POWER -200 TO -300V, 1A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JANHCB2N5415 |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 26.77 | |
| Microchip Direct | N/A | 1 | $ 28.83 | |
| Newark | Each | 100 | $ 26.77 | |
| 500 | $ 25.74 | |||
Description
General part information
JANHCB2N5415-Transistor-Die Series
This specification covers the performance requirements for PNP, silicon, switching, 2N5415 and 2N5416 transistors, complimentary to 2N3439 and 2N3440 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/485. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources