Discrete Semiconductor Products

NVTFS5116PLTAG

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ON Semiconductor

TRANS MOSFET P-CH 60V 6A AUTOMOTIVE AEC-Q101 8-PIN WDFN EP T/R

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DocumentsDatasheet Technical Data Sheet EN +2

Discrete Semiconductor Products

NVTFS5116PLTAG

Active

ON Semiconductor

TRANS MOSFET P-CH 60V 6A AUTOMOTIVE AEC-Q101 8-PIN WDFN EP T/R

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NVTFS5116PLTAG

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1258 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	21 W, 3.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVTFS5116PL Series

Single P-Channel Power MOSFET -60V, -14A, 52mΩ

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVTFS5116PLWFTWG	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	AEC-Q101	1258 pF	Automotive	25 nC	60 V	3.2 W 21 W	8-PowerWDFN	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	6 A	P-Channel	-55 °C	175 ░C
ON Semiconductor NVTFS5116PLTAG	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	AEC-Q101	1258 pF	Automotive	25 nC	60 V	3.2 W 21 W	8-PowerWDFN	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	6 A	P-Channel	-55 °C	175 ░C
ON Semiconductor NVTFS5116PLWFTAG	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	AEC-Q101	1258 pF	Automotive	25 nC	60 V	3.2 W 21 W	8-PowerWDFN	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	6 A	P-Channel	-55 °C	175 ░C
ON Semiconductor NVTFS5116PLTWG	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	AEC-Q101	1258 pF	Automotive	25 nC	60 V	3.2 W 21 W	8-PowerWDFN	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	6 A	P-Channel	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.40
		10	$ 0.88
		100	$ 0.58
		500	$ 0.46
	Digi-Reel®	1	$ 1.40
		10	$ 0.88
		100	$ 0.58
		500	$ 0.46
	Tape & Reel (TR)	1500	$ 0.39
		3000	$ 0.36
		4500	$ 0.35
		7500	$ 0.33
		10500	$ 0.32
Newark	Each (Supplied on Full Reel)	1	$ 0.31
ON Semiconductor	N/A	1	$ 0.29

Description

General part information

NVTFS5116PL Series

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

Package Drawing-511AB-WDFN8 3.3x3.3, 0.65P

Package Drawing