NVTFS5116PL Series

Single P-Channel Power MOSFET -60V, -14A, 52mΩ

Catalog

Single P-Channel Power MOSFET -60V, -14A, 52mΩ

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVTFS5116PLWFTWG	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	AEC-Q101	1258 pF	Automotive	25 nC	60 V	3.2 W 21 W	8-PowerWDFN	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	6 A	P-Channel	-55 °C	175 ░C
ON Semiconductor NVTFS5116PLTAG	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	AEC-Q101	1258 pF	Automotive	25 nC	60 V	3.2 W 21 W	8-PowerWDFN	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	6 A	P-Channel	-55 °C	175 ░C
ON Semiconductor NVTFS5116PLWFTAG	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	AEC-Q101	1258 pF	Automotive	25 nC	60 V	3.2 W 21 W	8-PowerWDFN	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	6 A	P-Channel	-55 °C	175 ░C
ON Semiconductor NVTFS5116PLTWG	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	AEC-Q101	1258 pF	Automotive	25 nC	60 V	3.2 W 21 W	8-PowerWDFN	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	6 A	P-Channel	-55 °C	175 ░C

Catalog

Single P-Channel Power MOSFET -60V, -14A, 52mΩ

Key Features

• Small Footprint (3.3 x 3.3 mm)

• Low On-Resistance

• Low Capacitance

• NVTFS5116PLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.