Specification	KSA539CYTA

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	400 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

KSA539 Series

PNP Epitaxial Silicon Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Power - Max [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Current - Collector (Ic) (Max) [Max]
ON Semiconductor KSA539CYTA	500 mV	100 nA	TO-92-3	TO-226-3 TO-92-3	120 hFE	PNP	400 mW	Through Hole	45 V	150 °C	200 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources