Catalog
PNP Epitaxial Silicon Transistor
Key Features
• Low Frequency Amplifier
• Complement to KSC815
• Collector:Base Voltage : VCBO= -60V
• Collector Dissipation : PC= 400mW
• Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Power - Max [Max] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) | Operating Temperature | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 500 mV | 100 nA | TO-92-3 | TO-226-3 TO-92-3 | 120 hFE | PNP | 400 mW | Through Hole | 45 V | 150 °C | 200 mA |