Specification	NTD600N80S3Z

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.5 nC
Input Capacitance (Ciss) (Max) @ Vds	725 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

NTD600N80S3Z Series

MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 8 A, 600 mΩ, DPAK

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology
ON Semiconductor NTD600N80S3Z	20 V	800 V	N-Channel	60 W	-55 °C	150 °C	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	3.8 V	600 mOhm	8 A	725 pF	15.5 nC	TO-252 (DPAK)	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.01
		10	$ 1.95
		100	$ 1.35
		500	$ 1.09
		1000	$ 1.01
	Digi-Reel®	1	$ 3.01
		10	$ 1.95
		100	$ 1.35
		500	$ 1.09
		1000	$ 1.01
	Tape & Reel (TR)	2500	$ 0.95
LCSC	Piece	1	$ 1.23
		10	$ 1.20
		30	$ 1.18
		100	$ 1.17
Newark	Each (Supplied on Full Reel)	1	$ 1.28
		3000	$ 1.20
		6000	$ 1.14
		12000	$ 1.03
		18000	$ 0.99
		30000	$ 0.95
ON Semiconductor	N/A	1	$ 0.87

Description

General part information

NTD600N80S3Z Series

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.