NTD600N80S3Z Series

MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 8 A, 600 mΩ, DPAK

Catalog

MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 8 A, 600 mΩ, DPAK

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology
ON Semiconductor NTD600N80S3Z	20 V	800 V	N-Channel	60 W	-55 °C	150 °C	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	3.8 V	600 mOhm	8 A	725 pF	15.5 nC	TO-252 (DPAK)	MOSFET (Metal Oxide)

Catalog

MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 8 A, 600 mΩ, DPAK

Key Features

• 900 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg = 15.5 nC)

• Low Stored Energy in Output Capacitance (Eoss = 1.74 µJ @ 400 V)

• Optimized Capacitance

• ESD Improved Capability with Zener Diode

• Typ. RDS(on) = 550 mΩ

• RoHS Compliant

• 100% Avalanche Tested

• Internal Gate Resistance: 3.5 Ω

Description

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.