Specification	FDB3672-F085

Current - Continuous Drain (Id) @ 25°C	7.2 A, 44 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	120 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDB3672_F085 Series

N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ

Part	Vgs(th) (Max) @ Id	Qualification	Grade	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
ON Semiconductor FDB3672-F085	4 V	AEC-Q101	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	-55 °C	175 ░C	7.2 A 44 A	100 V	Surface Mount	28 mOhm	MOSFET (Metal Oxide)	TO-263 (D2PAK)	31 nC	6 V 10 V	N-Channel	1710 pF	120 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.52
		10	$ 2.09
		100	$ 1.67
	Digi-Reel®	1	$ 2.52
		10	$ 2.09
		100	$ 1.67

Description

General part information

FDB3672_F085 Series

N-Channel PowerTrench®MOSFET 100V, 44A, 28mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.