FDB3672_F085 Series

N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ

Part	Vgs(th) (Max) @ Id	Qualification	Grade	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
ON Semiconductor FDB3672-F085	4 V	AEC-Q101	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	-55 °C	175 ░C	7.2 A 44 A	100 V	Surface Mount	28 mOhm	MOSFET (Metal Oxide)	TO-263 (D2PAK)	31 nC	6 V 10 V	N-Channel	1710 pF	120 W

Catalog

N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ

Key Features

• RDS(ON)= 24mΩ (Typ.), VGS= 10V, ID= 44A

• Qg(tot) = 24nC (Typ.), VGS= 10V

• Low Miller Charge

• Low QRRBody Diode

• OptimiRRzed efficiency at high frequencies

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS Compliant

Description

N-Channel PowerTrench®MOSFET 100V, 44A, 28mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.