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8-PQFN
Discrete Semiconductor Products

FDMS8680

LTB
ON Semiconductor

MOSFET, N-CH, 30V, 35A, POWER 56-8

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Search across all available documentation for this part.

8-PQFN
Discrete Semiconductor Products

FDMS8680

LTB
ON Semiconductor

MOSFET, N-CH, 30V, 35A, POWER 56-8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS8680
Current - Continuous Drain (Id) @ 25°C35 A, 14 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Input Capacitance (Ciss) (Max) @ Vds1590 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)50 W, 2.5 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.73
10$ 1.76
100$ 1.21
500$ 0.98
1000$ 0.90
Digi-Reel® 1$ 2.73
10$ 1.76
100$ 1.21
500$ 0.98
1000$ 0.90
Tape & Reel (TR) 3000$ 0.83
NewarkEach (Supplied on Cut Tape) 1$ 2.58

Description

General part information

FDMS86568_F085 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

Documents

Technical documentation and resources

No documents available