Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Grade	Qualification	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDMS86104	100 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V	24 mOhm	-55 °C	150 °C	4 V	16 nC	7 A 16 A	8-PowerTDFN	2.5 W 73 W	923 pF	Surface Mount	6 V 10 V	N-Channel
ON Semiconductor FDMS8670AS	30 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	3 V		23 A 42 A	8-PowerTDFN	2.5 W 78 W	3615 pF	Surface Mount	4.5 V 10 V	N-Channel	3 mOhm	55 nC
ON Semiconductor FDMS86581-F085	60 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	175 ░C	4 V		30 A	8-PowerTDFN	50 W	881 pF	Surface Mount	10 V	N-Channel	15 mOhm	19 nC	Automotive	AEC-Q101
ON Semiconductor FDMS8680	30 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	3 V	26 nC	14 A 35 A	8-PowerTDFN	2.5 W 50 W	1590 pF	Surface Mount	4.5 V 10 V	N-Channel	7 mOhm
ON Semiconductor FDMS86101A	100 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	4 V	58 nC	13 A 60 A	8-PowerTDFN		4120 pF	Surface Mount	6 V 10 V	N-Channel	8 mOhm				2.5 W	104 W
ON Semiconductor FDMS86322	80 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	4 V		13 A 60 A	8-PowerTDFN			Surface Mount	6 V 10 V	N-Channel	7.65 mOhm	55 nC			2.5 W	104 W	3000 pF
ON Semiconductor FDMS86255ET150	150 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	175 ░C	4 V	63 nC	10 A 63 A	8-PowerTDFN	3.3 W 136 W	4480 pF	Surface Mount	6 V 10 V	N-Channel
ON Semiconductor FDMS86255	150 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	4 V	63 nC	10 A 45 A	8-PowerTDFN	2.7 W 113 W	4480 pF	Surface Mount	6 V 10 V	N-Channel
ON Semiconductor FDMS86200DC	150 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	4 V		9.3 A 28 A	8-PowerTDFN	3.2 W 125 W	2955 pF	Surface Mount	6 V 10 V	N-Channel	17 mOhm	42 nC
ON Semiconductor FDMS86181E

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FDMS86568_F085 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.