Discrete Semiconductor Products

NP100N055PUK-E1-AY

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TRANS MOSFET N-CH 55V 100A 3-PIN(2+TAB) TO-263 T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 55V 100A 3-PIN(2+TAB) TO-263 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	NP100N055PUK-E1-AY

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	7350 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	1.8 W
Power Dissipation (Max)	176 W
Rds On (Max) @ Id, Vgs [Max]	3.25 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Renesas Electronics Corporation NP100N055PUK-E1-AY	55 V	1.8 W	176 W	7350 pF	3.25 mOhm	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 A	175 °C	N-Channel	MOSFET (Metal Oxide)	10 V	4 V	20 V	120 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Super low on-state resistanceRDS(on) = 3.25 m? MAX. (VGS = 10 V, ID = 50 A)

RDS(on) = 3.25 m? MAX. (VGS = 10 V, ID = 50 A)

Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)

Technical documentation and resources