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8-PQFN
Discrete Semiconductor Products

FDMS4D4N08C

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 80V, 123A, 4.3MΩ

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DocumentsDatasheetDatasheet+1
8-PQFN
Discrete Semiconductor Products

FDMS4D4N08C

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 80V, 123A, 4.3MΩ

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS4D4N08C
Current - Continuous Drain (Id) @ 25°C123 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
Input Capacitance (Ciss) (Max) @ Vds4090 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs4.3 mOhm
Supplier Device PackagePower56, 8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.30
10$ 2.15
100$ 1.50
500$ 1.22
1000$ 1.13
Digi-Reel® 1$ 3.30
10$ 2.15
100$ 1.50
500$ 1.22
1000$ 1.13
Tape & Reel (TR) 3000$ 1.08
NewarkEach (Supplied on Full Reel) 3000$ 1.37
6000$ 1.30
12000$ 1.17
18000$ 1.12
30000$ 1.08
ON SemiconductorN/A 1$ 1.15

Description

General part information

FDMS4D4N08C Series

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.