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fdmc8200(top)
Discrete Semiconductor Products

FDMC8200

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ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 9.5MΩ AND 20MΩ

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fdmc8200(top)
Discrete Semiconductor Products

FDMC8200

Active
ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 9.5MΩ AND 20MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC8200
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25¯C [Max]12 A
Current - Continuous Drain (Id) @ 25¯C [Min]8 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]660 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power - Max [Max]900 mW
Power - Max [Min]700 mW
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device Package8-Power33 (3x3)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.19
10$ 0.97
100$ 0.76
500$ 0.64
1000$ 0.52
Digi-ReelÛ 1$ 1.19
10$ 0.97
100$ 0.76
500$ 0.64
1000$ 0.52
Tape & Reel (TR) 3000$ 0.49
6000$ 0.47
9000$ 0.45
NewarkEach (Supplied on Cut Tape) 500$ 0.68
ON SemiconductorN/A 1$ 0.27

Description

General part information

FDMC8200 Series

This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.