Specification	FDMC8296

Current - Continuous Drain (Id) @ 25°C	12 A, 18 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1385 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.3 W, 27 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	8-MLP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC8200 Series

Dual N-Channel PowerTrench® MOSFET 30V, 9.5mΩ and 20mΩ

Part	Supplier Device Package	Mounting Type	Package / Case	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Power - Max [Min]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25¯C [Min]	Current - Continuous Drain (Id) @ 25¯C [Max]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDMC8298	Die	Surface Mount	Die
ON Semiconductor FDMC8296	8-MLP (3.3x3.3)	Surface Mount	8-PowerWDFN	N-Channel	MOSFET (Metal Oxide)	12 A 18 A	20 V	30 V	4.5 V 10 V	-55 °C	150 °C	23 nC	8 mOhm	2.3 W 27 W	3 V	1385 pF
ON Semiconductor FDMC8200	8-Power33 (3x3)	Surface Mount	8-PowerWDFN		MOSFET (Metal Oxide)			30 V		-55 °C	150 °C	10 nC	20 mOhm		3 V		2 N-Channel (Dual)	700 mW	900 mW	8 A	12 A	Logic Level Gate	660 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMC8200 Series

This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.