Discrete Semiconductor Products

PHD22NQ20T,118

Obsolete

MOSFET N-CH 200V 21.1A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 21.1A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD22NQ20T,118

Current - Continuous Drain (Id) (Tc)	21.1 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30.8 nC, 30.8 nC
Input Capacitance (Ciss) (Max)	1380 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	150 W
Rds On (Max)	120 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package Name	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)
NXP USA Inc. PHD22NQ20T,118	Surface Mount	N-Channel	200 V	30.8 nC 30.8 nC	DPak	MOSFET (Metal Oxide)	-55 °C	175 °C	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1380 pF	120 mOhm	10 V	4 V	150 W	21.1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 200 V 21.1A (Tc) 150W (Tc) Surface Mount DPAK

Technical documentation and resources