PHD22 Series
Manufacturer: NXP USA Inc.
MOSFET N-CH 200V 21.1A DPAK
| Part | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Package Name | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) | Rds On (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP USA Inc. | Surface Mount | N-Channel | 200 V | 30.8 nC 30.8 nC | DPak | MOSFET (Metal Oxide) | -55 °C | 175 °C | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1380 pF | 120 mOhm | 10 V | 4 V | 150 W | 21.1 A |