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ONSEMI NTMTS6D0N15MC
Discrete Semiconductor Products

NTMTS6D0N15MC

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ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 150V, 135A, 6.4MΩ, PQFN 8X8

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ONSEMI NTMTS6D0N15MC
Discrete Semiconductor Products

NTMTS6D0N15MC

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 150V, 135A, 6.4MΩ, PQFN 8X8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMTS6D0N15MC
Current - Continuous Drain (Id) @ 25°C19 A, 135 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]58 nC
Input Capacitance (Ciss) (Max) @ Vds4815 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)245 W, 4.9 W
Rds On (Max) @ Id, Vgs6.4 mOhm
Supplier Device Package8-DFNW
Supplier Device Package [x]8.3
Supplier Device Package [y]8.4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.71
10$ 4.53
100$ 3.29
500$ 2.80
Digi-Reel® 1$ 6.71
10$ 4.53
100$ 3.29
500$ 2.80
Tape & Reel (TR) 3000$ 2.80
NewarkEach (Supplied on Cut Tape) 1$ 6.96
10$ 4.89
25$ 4.49
50$ 4.09
100$ 3.68
250$ 3.52
500$ 3.36
ON SemiconductorN/A 1$ 2.58

Description

General part information

NTMTS6D0N15MC Series

This N-Channel PTNG 150V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.