NTMTS6D0N15MC Series

Single N-Channel Power MOSFET 150V, 135A, 6.4mΩ, PQFN 8x8

Catalog

Single N-Channel Power MOSFET 150V, 135A, 6.4mΩ, PQFN 8x8

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
ON Semiconductor NTMTS6D0N15MC	20 V	6.4 mOhm	4.5 V	19 A 135 A	150 V	8.3	8-DFNW	8.4	8 V 10 V	8-PowerTDFN	4815 pF	-55 °C	175 ░C	Surface Mount	4.9 W 245 W	MOSFET (Metal Oxide)	58 nC	N-Channel

Catalog

Single N-Channel Power MOSFET 150V, 135A, 6.4mΩ, PQFN 8x8

Key Features

• Very Low RDS(on), Shielded Gate Trench Technology

• Low Profile PQFN 8x8 package

• Maximum junction temperature of 175C

• RoHS Compliant

• Soft Body diode with low Qrr

Description

This N-Channel PTNG 150V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.