Discrete Semiconductor Products

S3D20065C

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DIODE ARR SIC 650V 10A TO220AB

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Discrete Semiconductor Products

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DIODE ARR SIC 650V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	S3D20065C

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	20 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AB
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Technology	Speed	Current - Average Rectified (Io) (per Diode)	Diode Configuration
SMC Diode Solutions S3D20065H	175 ░C	-55 C	30 µA	1.7 V	Through Hole	1200 pF	650 V	TO-247-2	TO-247AC	SiC (Silicon Carbide) Schottky	No Recovery Time
SMC Diode Solutions S3D20065D	175 ░C	-55 C	20 µA	1.7 V	Through Hole		650 V	TO-247-3	TO-247AD	SiC (Silicon Carbide) Schottky	No Recovery Time	10 A	1 Pair Common Cathode
SMC Diode Solutions S3D20065A	175 ░C	-55 C	30 µA	1.7 V	Through Hole	1200 pF	650 V	TO-220-2	TO-220AC (TO-220-2)	SiC (Silicon Carbide) Schottky	No Recovery Time
SMC Diode Solutions S3D20065C	175 ░C	-55 C	20 µA	1.7 V	Through Hole		650 V	TO-220-3	TO-220AB	SiC (Silicon Carbide) Schottky	No Recovery Time	10 A	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 650 V 10A Through Hole TO-220-3

Technical documentation and resources