Specification	FDC8886

Current - Continuous Drain (Id) @ 25°C	6.5 A, 8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC
Input Capacitance (Ciss) (Max) @ Vds	465 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDC8886 Series

N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDC8886	6.5 A 8 A	Surface Mount	N-Channel	SuperSOT™-6	-55 °C	150 °C	20 V	4.5 V 10 V	3 V	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	30 V	465 pF	23 mOhm	7.4 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1575	$ 0.19
Newark	Each (Supplied on Full Reel)	3000	$ 0.22
		6000	$ 0.20
		12000	$ 0.19
		18000	$ 0.18
		30000	$ 0.17
ON Semiconductor	N/A	1	$ 0.15

General part information

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on)switching performance.