FDC8886 Series

N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ

Catalog

N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDC8886	6.5 A 8 A	Surface Mount	N-Channel	SuperSOT™-6	-55 °C	150 °C	20 V	4.5 V 10 V	3 V	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	30 V	465 pF	23 mOhm	7.4 nC

N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ

• Max rDS(on)= 23 mΩ at VGS= 10 V, ID= 6.5 A

• Max rDS(on)= 36 mΩ at VGS= 4.5 V, ID= 6.0 A

• High performance trench technology for extremely low rDS(on)

• Fast switching speed

• RoHS Compliant

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on)switching performance.