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4-DSBGA-YZB
Discrete Semiconductor Products

CSD13302W

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Texas Instruments

MOSFET N-CH 12V 1.6A 4DSBGA

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4-DSBGA-YZB
Discrete Semiconductor Products

CSD13302W

Active
Texas Instruments

MOSFET N-CH 12V 1.6A 4DSBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD13302W
Current - Continuous Drain (Id) @ 25°C1.6 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]7.8 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-UFBGA, DSBGA
Power Dissipation (Max)1.8 W
Rds On (Max) @ Id, Vgs [Max]17.1 mOhm
Supplier Device Package4-DSBGA (1x1)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.56
10$ 0.34
100$ 0.22
500$ 0.16
1000$ 0.15
Digi-Reel® 1$ 0.56
10$ 0.34
100$ 0.22
500$ 0.16
1000$ 0.15
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
9000$ 0.11
15000$ 0.10
21000$ 0.10
30000$ 0.09
75000$ 0.09

Description

General part information

CSD13302W Series

This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.

This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.

Documents

Technical documentation and resources

No documents available