CSD13302W Series

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Mounting Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]
Texas Instruments CSD13302WT	2.5 V 4.5 V	1.6 A	4-DSBGA (1x1)	7.8 nC	4-UFBGA DSBGA	N-Channel	Surface Mount	MOSFET (Metal Oxide)	1.3 V	10 V	1.8 W	12 V	-55 °C	150 °C	17.1 mOhm
Texas Instruments CSD13302W	2.5 V 4.5 V	1.6 A	4-DSBGA (1x1)	7.8 nC	4-UFBGA DSBGA	N-Channel	Surface Mount	MOSFET (Metal Oxide)	1.3 V	10 V	1.8 W	12 V	-55 °C	150 °C	17.1 mOhm

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm

Key Features

• Ultra Low On ResistanceLow Qgand QgdSmall Footprint 1 mm × 1 mmLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeUltra Low On ResistanceLow Qgand QgdSmall Footprint 1 mm × 1 mmLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen Free

Description

This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile. This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.