STP100NF04
ActiveN-CHANNEL 40 V, 0.0043 OHM TYP., 120 A, STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE
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STP100NF04
ActiveN-CHANNEL 40 V, 0.0043 OHM TYP., 120 A, STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP100NF04 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 150 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 5100 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 300 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
STP100NF04 Series
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Documents
Technical documentation and resources