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TO-252AA
Discrete Semiconductor Products

FDD5690

Obsolete
ON Semiconductor

60V N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30A, 27MΩ

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TO-252AA
Discrete Semiconductor Products

FDD5690

Obsolete
ON Semiconductor

60V N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30A, 27MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD5690
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC
Input Capacitance (Ciss) (Max) @ Vds1110 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)50 W, 3.2 W
Rds On (Max) @ Id, Vgs27 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.23
10$ 1.43
100$ 0.97
500$ 0.77
1000$ 0.71
Digi-Reel® 1$ 2.23
10$ 1.43
100$ 0.97
500$ 0.77
1000$ 0.71
Tape & Reel (TR) 2500$ 0.64
5000$ 0.60

Description

General part information

FDD5690 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.