FDD5690 Series

60V N-Channel PowerTrench® MOSFET 30A, 27mΩ

Catalog

60V N-Channel PowerTrench® MOSFET 30A, 27mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDD5690	6 V 10 V	-55 °C	150 °C	32 nC	Surface Mount	60 V	3.2 W 50 W	4 V	N-Channel	MOSFET (Metal Oxide)	1110 pF	TO-252AA	27 mOhm	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 A

Catalog

60V N-Channel PowerTrench® MOSFET 30A, 27mΩ

Key Features

• 30 A, 60 V

• RDS(on)= 27 mΩ @ VGS= 10 V

• RDS(on)= 32 mΩ @ VGS= 6 V

• Low gate charge (23nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.