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Discrete Semiconductor Products

NTMFSC1D6N06CL

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ON Semiconductor

POWER MOSFET, 60V N CHANNEL 235A 1.5M OHM IN DUALCOOL56 PACKAGE

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8-DFN
Discrete Semiconductor Products

NTMFSC1D6N06CL

Active
ON Semiconductor

POWER MOSFET, 60V N CHANNEL 235A 1.5M OHM IN DUALCOOL56 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFSC1D6N06CL
Current - Continuous Drain (Id) @ 25°C36 A, 235 A
Drain to Source Voltage (Vdss)60 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]91 nC
Input Capacitance (Ciss) (Max) @ Vds6660 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)166 W, 3.8 W
Supplier Device Package8-DFN (5x6.15)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

NTMFSC1D6N06CL Series

Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package

PartInput Capacitance (Ciss) (Max) @ VdsVgs(th) (Max) @ IdVgs (Max)Current - Continuous Drain (Id) @ 25°CTechnologyOperating Temperature [Min]Operating Temperature [Max]Mounting TypeGate Charge (Qg) (Max) @ Vgs [Max] [custom]Power Dissipation (Max)Package / CaseDrain to Source Voltage (Vdss)Supplier Device PackageFET Type
8-DFN
ON Semiconductor
6660 pF
2 V
20 V
36 A
235 A
MOSFET (Metal Oxide)
-55 °C
150 °C
Surface Mount
91 nC
3.8 W
166 W
8-PowerVDFN
60 V
8-DFN (5x6.15)
N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.70
10$ 2.43
100$ 1.70
500$ 1.39
1000$ 1.29
Digi-Reel® 1$ 3.70
10$ 2.43
100$ 1.70
500$ 1.39
1000$ 1.29
Tape & Reel (TR) 3000$ 1.26
NewarkEach (Supplied on Full Reel) 3000$ 0.86
ON SemiconductorN/A 1$ 0.71

Description

General part information

NTMFSC1D6N06CL Series

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Documents

Technical documentation and resources