Littelfuse Power Semi TO-263 3 1S2C image

Discrete Semiconductor Products

IXTA120N075T2

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN2 TO-263D2/ TUBE

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Discrete Semiconductor Products

IXTA120N075T2

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN2 TO-263D2/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA120N075T2

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs [Max]	7.7 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IXTA120N075T2 Series

DiscMSFT NChTrenchGate-Gen2 TO-263D2

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Littelfuse/Commercial Vehicle Products IXTA120P065T	13200 pF	MOSFET (Metal Oxide)	65 V	Surface Mount	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	15 V	10 mOhm	P-Channel	120 A	185 nC	10 V	TO-263AA	298 W
Littelfuse/Commercial Vehicle Products IXTA120N075T2		MOSFET (Metal Oxide)	75 V	Surface Mount	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	20 V	7.7 mOhm	N-Channel	120 A	78 nC	10 V	TO-263AA	250 W	4740 pF
Littelfuse/Commercial Vehicle Products IXTA120N04T2	3240 pF	MOSFET (Metal Oxide)	40 V	Surface Mount	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	20 V		N-Channel	120 A	58 nC	10 V	TO-263AA			200 W	6.1 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.68
Newark	Each	100	$ 2.79
		500	$ 2.54
		1000	$ 2.24
		2500	$ 2.08

Description

General part information

IXTA120N075T2 Series

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost

Documents

Technical documentation and resources

No documents available