
IXTA120P065T
ActivePOWER MOSFET, P CHANNEL, 65 V, 120 A, 0.01 OHM, TO-263AA, SURFACE MOUNT
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IXTA120P065T
ActivePOWER MOSFET, P CHANNEL, 65 V, 120 A, 0.01 OHM, TO-263AA, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTA120P065T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 65 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 185 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 298 W |
| Rds On (Max) @ Id, Vgs [Max] | 10 mOhm |
| Supplier Device Package | TO-263AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.26 | |
| 50 | $ 5.00 | |||
| 100 | $ 4.47 | |||
| 500 | $ 3.95 | |||
| 1000 | $ 3.55 | |||
| 2000 | $ 3.33 | |||
Description
General part information
IXTA120N075T2 Series
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost
Documents
Technical documentation and resources