
FFSM2065B
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 650 V, 20 A, 51 NC, PQFN
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FFSM2065B
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 650 V, 20 A, 51 NC, PQFN
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Technical Specifications
Parameters and characteristics for this part
| Specification | FFSM2065B |
|---|---|
| Capacitance @ Vr, F | 866 pF |
| Current - Average Rectified (Io) | 23.4 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | 4-PowerTSFN |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | 4-PQFN (8x8) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 6.32 | |
| 10 | $ 4.25 | |||
| 100 | $ 3.07 | |||
| 500 | $ 2.56 | |||
| 1000 | $ 2.49 | |||
| Digi-Reel® | 1 | $ 6.32 | ||
| 10 | $ 4.25 | |||
| 100 | $ 3.07 | |||
| 500 | $ 2.56 | |||
| 1000 | $ 2.49 | |||
| Tape & Reel (TR) | 3000 | $ 2.49 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 5.55 | |
| 10 | $ 3.90 | |||
| 25 | $ 3.57 | |||
| 50 | $ 3.24 | |||
| 100 | $ 2.91 | |||
| 250 | $ 2.76 | |||
| 500 | $ 2.59 | |||
| ON Semiconductor | N/A | 1 | $ 2.29 | |
Description
General part information
FFSM2065B Series
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Documents
Technical documentation and resources