FFSM2065B Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, Power88

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, Power88

Part	Reverse Recovery Time (trr)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Mounting Type
ON Semiconductor FFSM2065B	0 ns	4-PowerTSFN	650 V	4-PQFN (8x8)	1.7 V	866 pF	SiC (Silicon Carbide) Schottky	23.4 A	40 µA	175 ░C	-55 C	No Recovery Time	Surface Mount

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, Power88

Key Features

• Max Junction Temperature 175 °C

• Leadless Ultra-thin SMD package

• Avalanche Rated 94 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• No Reverse Recovery / No Forward Recovery

• Low Vf @ TJ:175 °C

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.