Discrete Semiconductor Products
FDME820NZT
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 20V, 9A, 18MΩ
Discrete Semiconductor Products
FDME820NZT
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 20V, 9A, 18MΩ
Technical Specifications
Parameters and characteristics for this part
| Specification | FDME820NZT |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-PowerUFDFN |
| Power Dissipation (Max) | 2.1 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | MicroFet 1.6x1.6 Thin |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 624 | $ 0.48 | |
| 624 | $ 0.48 | |||
| 760 | $ 0.39 | |||
| 760 | $ 0.39 | |||
| Cut Tape (CT) | 1 | $ 1.43 | ||
| 1 | $ 1.43 | |||
| 10 | $ 0.90 | |||
| 10 | $ 0.90 | |||
| 100 | $ 0.60 | |||
| 100 | $ 0.60 | |||
| 500 | $ 0.47 | |||
| 500 | $ 0.47 | |||
| 1000 | $ 0.43 | |||
| 1000 | $ 0.43 | |||
| 2000 | $ 0.39 | |||
| 2000 | $ 0.39 | |||
| Digi-Reel® | 1 | $ 1.43 | ||
| 1 | $ 1.43 | |||
| 10 | $ 0.90 | |||
| 10 | $ 0.90 | |||
| 100 | $ 0.60 | |||
| 100 | $ 0.60 | |||
| 500 | $ 0.47 | |||
| 500 | $ 0.47 | |||
| 1000 | $ 0.43 | |||
| 1000 | $ 0.43 | |||
| 2000 | $ 0.39 | |||
| 2000 | $ 0.39 | |||
| Tape & Reel (TR) | 5000 | $ 0.35 | ||
| 5000 | $ 0.35 | |||
| 10000 | $ 0.34 | |||
| 10000 | $ 0.34 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.45 | |
| 6000 | $ 0.41 | |||
| 12000 | $ 0.37 | |||
| 18000 | $ 0.36 | |||
| 30000 | $ 0.35 | |||
| ON Semiconductor | N/A | 1 | $ 0.27 | |
Description
General part information
FDME820NZT Series
This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON)@ VGS= 1.8 V on special MicroFET leadframe.
Documents
Technical documentation and resources