FDME820NZT Series

N-Channel PowerTrench® MOSFET 20V, 9A, 18mΩ

Catalog

N-Channel PowerTrench® MOSFET 20V, 9A, 18mΩ

Part	FET Type	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDME820NZT	N-Channel	Surface Mount	6-PowerUFDFN	20 V	8.5 nC	18 mOhm	865 pF	1.8 V 4.5 V	2.1 W	1 V	MicroFet 1.6x1.6 Thin	12 V	MOSFET (Metal Oxide)	-55 °C	150 °C	9 A
ON Semiconductor FDME820NZT	N-Channel	Surface Mount	6-PowerUFDFN	20 V	8.5 nC	18 mOhm	865 pF	1.8 V 4.5 V	2.1 W	1 V	MicroFet 1.6x1.6 Thin	12 V	MOSFET (Metal Oxide)	-55 °C	150 °C	9 A

Catalog

N-Channel PowerTrench® MOSFET 20V, 9A, 18mΩ

Key Features

• Max rDS(on)= 18 mΩ at VGS= 4.5 V, ID= 9 A

• Max rDS(on)= 24 mΩ at VGS= 2.5 V, ID= 7.5 A

• Max rDS(on)= 32 mΩ at VGS= 1.8 V, ID= 7 A

• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6Thin

• Free from halogenated compounds and antimony oxides

• HBM ESD protection level >2.5kV(Note 3)

• RoHS Compliant

Description

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON)@ VGS= 1.8 V on special MicroFET leadframe.