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TO-252AA
Discrete Semiconductor Products

FDD8880

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 58A, 9MΩ

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TO-252AA
Discrete Semiconductor Products

FDD8880

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 58A, 9MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD8880
Current - Continuous Drain (Id) @ 25°C13 A
Current - Continuous Drain (Id) @ 25°C58 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds1260 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]55 W
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.28
10$ 0.81
100$ 0.53
500$ 0.42
1000$ 0.38
Digi-Reel® 1$ 1.28
10$ 0.81
100$ 0.53
500$ 0.42
1000$ 0.38
Tape & Reel (TR) 2500$ 0.34
5000$ 0.31
7500$ 0.30
12500$ 0.29
ON SemiconductorN/A 1$ 0.31

Description

General part information

FDD8880 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.

Documents

Technical documentation and resources