FDD8880 Series

N-Channel PowerTrench® MOSFET 30V, 58A, 9mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 58A, 9mΩ

Part	FET Type	Technology	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor FDD8880	N-Channel	MOSFET (Metal Oxide)	Surface Mount	55 W	2.5 V	20 V	4.5 V 10 V	1260 pF	13 A	58 A	31 nC	30 V	TO-252AA	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3

Catalog

N-Channel PowerTrench® MOSFET 30V, 58A, 9mΩ

Key Features

• RDS(ON)= 9 mΩ @ VGS= 10V @ ID= 35A

• RDS(ON)= 12 mΩ @ VGS= 4.5V @ ID= 35A

• High performance trench technology for extremely low rDS(ON)

• Low gate charge

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.