Discrete Semiconductor Products

FQAF70N15

Obsolete

MOSFET N-CH 150V 44A TO3PF

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 44A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	FQAF70N15

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	175 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs [Max]	28 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQAF7N90	900 V	MOSFET (Metal Oxide)	59 nC	10 V	5 V	1.55 Ohm	2280 pF	30 V	N-Channel	-55 °C	150 °C	TO-3PF	107 W	Through Hole	5.2 A	TO-3P-3 Full Pack
ON Semiconductor FQAF70N15	150 V	MOSFET (Metal Oxide)		10 V	4 V			25 V	N-Channel	-55 °C	175 ░C	TO-3PF	130 W	Through Hole	44 A	TO-3P-3 Full Pack	175 nC	5400 pF	28 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 44A (Tc) 130W (Tc) Through Hole TO-3PF

Technical documentation and resources