Discrete Semiconductor Products

FQAF7N90

Obsolete

MOSFET N-CH 900V 5.2A TO3PF

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 900V 5.2A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	FQAF7N90

Current - Continuous Drain (Id) @ 25°C	5.2 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds	2280 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	107 W
Rds On (Max) @ Id, Vgs	1.55 Ohm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQAF7N90	900 V	MOSFET (Metal Oxide)	59 nC	10 V	5 V	1.55 Ohm	2280 pF	30 V	N-Channel	-55 °C	150 °C	TO-3PF	107 W	Through Hole	5.2 A	TO-3P-3 Full Pack
ON Semiconductor FQAF70N15	150 V	MOSFET (Metal Oxide)		10 V	4 V			25 V	N-Channel	-55 °C	175 ░C	TO-3PF	130 W	Through Hole	44 A	TO-3P-3 Full Pack	175 nC	5400 pF	28 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 5.2A (Tc) 107W (Tc) Through Hole TO-3PF

Technical documentation and resources