Specification	FFSH2065B-F155

Capacitance @ Vr, F	866 pF
Current - Average Rectified (Io)	22.3 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

FFSH2065B-F155 Series

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-2L

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Technology	Speed	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F
ON Semiconductor FFSH2065B-F155	175 ░C	-55 C	0 ns	40 µA	TO-247-2	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	22.3 A	650 V	Through Hole	1.7 V	866 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.30
		30	$ 2.92
		120	$ 2.61
		510	$ 2.26
		1020	$ 1.93
ON Semiconductor	N/A	1	$ 1.95

Description

General part information

FFSH2065B-F155 Series

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost