FFSH2065B-F155 Series

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-2L

Catalog

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-2L

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Technology	Speed	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F
ON Semiconductor FFSH2065B-F155	175 ░C	-55 C	0 ns	40 µA	TO-247-2	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	22.3 A	650 V	Through Hole	1.7 V	866 pF

Catalog

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-2L

Key Features

• Max Junction Temperature 175C

• Avalanche Rated 94 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• No Reverse Recovery / No Forward Recovery

• Low Vf @ TJ:175 °C

Description

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost