Specification	EFC2K107NUZTCG

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs	30 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	10-SMD, No Lead
Power - Max [Max]	1.8 W
Supplier Device Package	10-WLCSP
Supplier Device Package [x]	1.84
Supplier Device Package [y]	1.96
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

EFC2K107NUZ Series

Dual N-Channel Power MOSFET 12V, 20A, 2.85mΩ

Part	Technology	Configuration	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature	FET Feature	FET Feature	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Power - Max [Max]
ON Semiconductor EFC2K107NUZTCG	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	20 A	30 nC	12 V	Surface Mount	1.3 V	10-SMD No Lead	150 °C	Logic Level Gate	2.5 V	1.84	10-WLCSP	1.96	1.8 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.36
		10	$ 0.86
		100	$ 0.57
		500	$ 0.44
		1000	$ 0.40
		2000	$ 0.37

Description

General part information

EFC2K107NUZ Series

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications.