Specification	KSC5603DTU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	5 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

KSC5603D Series

NPN Silicon Transistor Planar Silicon Transistor

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Package / Case	Transistor Type
ON Semiconductor KSC5603D	TO-220-3	800 V	5 MHz	Through Hole	20	3 A	2.5 V	100 W	100 µA	150 °C	TO-220-3	NPN
ON Semiconductor KSC5603DTU	TO-220-3	800 V	5 MHz	Through Hole	20	3 A	2.5 V	100 W	100 µA	150 °C	TO-220-3	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Silicon Transistor Planar Silicon Transistor

Technical documentation and resources