Discrete Semiconductor Products

KSC5603D

Obsolete

TRANS NPN 800V 3A TO-220-3

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Discrete Semiconductor Products

Obsolete

TRANS NPN 800V 3A TO-220-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC5603D

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	5 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

NPN Silicon Transistor Planar Silicon Transistor

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Package / Case	Transistor Type
ON Semiconductor KSC5603D	TO-220-3	800 V	5 MHz	Through Hole	20	3 A	2.5 V	100 W	100 µA	150 °C	TO-220-3	NPN
ON Semiconductor KSC5603DTU	TO-220-3	800 V	5 MHz	Through Hole	20	3 A	2.5 V	100 W	100 µA	150 °C	TO-220-3	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Silicon Transistor Planar Silicon Transistor

Technical documentation and resources