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ONSEMI MJD31T4G
Discrete Semiconductor Products

MJD127T4G

Active
ON Semiconductor

DARLINGTON TRANSISTOR, DUAL PNP, 100 V, 8 A, 20 W, 1000 HFE, TO-252 (DPAK), 3 PINS

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ONSEMI MJD31T4G
Discrete Semiconductor Products

MJD127T4G

Active
ON Semiconductor

DARLINGTON TRANSISTOR, DUAL PNP, 100 V, 8 A, 20 W, 1000 HFE, TO-252 (DPAK), 3 PINS

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD127T4G
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 hFE
Frequency - Transition4 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.75 W
Supplier Device PackageDPAK
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic4 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 2500$ 0.26
5000$ 0.25
7500$ 0.24
DigikeyCut Tape (CT) 1$ 0.77
10$ 0.67
100$ 0.46
500$ 0.38
1000$ 0.33
Digi-Reel® 1$ 0.77
10$ 0.67
100$ 0.46
500$ 0.38
1000$ 0.33
Tape & Reel (TR) 2500$ 0.29
5000$ 0.28
12500$ 0.26
25000$ 0.25
NewarkEach (Supplied on Full Reel) 1$ 0.35
3000$ 0.34
6000$ 0.32
12000$ 0.29
18000$ 0.27
30000$ 0.26
ON SemiconductorN/A 1$ 0.27

Description

General part information

MJD127 Series

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.