MJD127 Series

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

Catalog

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

Part	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Frequency - Transition	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor MJD127T4G	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-65 °C	1.75 W	100 V	PNP - Darlington	4 MHz	Surface Mount	1000 hFE	8 A	10 µA	4 V

Catalog

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

Key Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)

• Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series

• Monolithic Construction With Built-in Base-Emitter Shunt Resistors

• High DC Current Gain hFE= 2500 (Typ) @ IC= 4.0 Adc

• Complementary Pairs Simplifies Designs

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• PbFree Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.