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ONSEMI FDMA1032CZ
Discrete Semiconductor Products

FDMA1029PZ

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ON Semiconductor

DUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -3.1A, 95MΩ

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ONSEMI FDMA1032CZ
Discrete Semiconductor Products

FDMA1029PZ

Active
ON Semiconductor

DUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -3.1A, 95MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA1029PZ
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C3.1 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds540 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs95 mOhm
Supplier Device Package6-WDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.84
10$ 0.73
100$ 0.51
500$ 0.42
1000$ 0.36
Digi-Reel® 1$ 0.84
10$ 0.73
100$ 0.51
500$ 0.42
1000$ 0.36
Tape & Reel (TR) 3000$ 0.32
6000$ 0.30
9000$ 0.28
30000$ 0.28
NewarkEach (Supplied on Full Reel) 3000$ 0.38
6000$ 0.35
12000$ 0.32
18000$ 0.30
30000$ 0.29
ON SemiconductorN/A 1$ 0.17

Description

General part information

FDMA1029PZ Series

This device is designed specifically as a single-package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET™ 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.