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MJD32CTF-ON
Discrete Semiconductor Products

FDD8896

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 94 A, 30 V, 0.0047 OHM, 10 V, 2.5 V ROHS COMPLIANT: YES

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MJD32CTF-ON
Discrete Semiconductor Products

FDD8896

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 94 A, 30 V, 0.0047 OHM, 10 V, 2.5 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD8896
Current - Continuous Drain (Id) @ 25°C17 A, 94 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds2525 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)80 W
Rds On (Max) @ Id, Vgs5.7 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 692$ 0.43
NewarkEach (Supplied on Full Reel) 1$ 0.52
3000$ 0.50
6000$ 0.45
12000$ 0.41
18000$ 0.39
30000$ 0.38
ON SemiconductorN/A 1$ 0.40

Description

General part information

FDD8896 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.