FDD8896 Series

N-Channel PowerTrench® MOSFET 30V, 94A, 4.7mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 94A, 4.7mΩ

Part	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDD8896	TO-252 (DPAK)	80 W	20 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	2525 pF	N-Channel	30 V	2.5 V	4.5 V 10 V	17 A 94 A	5.7 mOhm	60 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C

Catalog

N-Channel PowerTrench® MOSFET 30V, 94A, 4.7mΩ

Key Features

• RDS(ON)= 5.7 mΩ, VGS= 10V, ID= 35V

• RDS(ON)= 6.8 mΩ, VGS= 4.5V, ID= 35V

• High performance trench technology for extremely low RDS(ON)

• Low gate charge

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.