Discrete Semiconductor Products
SCT4036KEHRC11
ActiveRohm Semiconductor
1200V, 43A, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
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Discrete Semiconductor Products
SCT4036KEHRC11
ActiveRohm Semiconductor
1200V, 43A, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT4036KEHRC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 43 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 91 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2335 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 176 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 47 mOhm |
| Supplier Device Package | TO-247N |
| Vgs (Max) [Max] | 21 V |
| Vgs (Max) [Min] | -4 V |
| Vgs(th) (Max) @ Id | 4.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT4036KEHR Series
AEC-Q101 qualified automotive grade product. SCT4036KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Documents
Technical documentation and resources